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| GBJ8005 - GBJ810 8.0A GLASS PASSIVATED BRIDGE RECTIFIER Features * * * * * * * Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 170A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 UL Listed Under Recognized Component Index, File Number E94661 GBJ Dim A B C D E G Min 29.70 19.70 17.00 3.80 7.30 9.80 2.00 0.90 2.30 4.40 3.40 3.10 2.50 0.60 10.80 Max 30.30 20.30 18.00 4.20 7.70 10.20 2.40 1.10 2.70 4.80 3.80 3.40 2.90 0.80 11.20 L K A M B _ S P C R N H I J K L M N P R S Mechanical Data * * * * * * * Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Weight: 6.6 grams (approx.) Marking: Type Number J D H I 3.0 X 45 G E E All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Rectified Output Current @ TC = 110C Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) Forward Voltage per element Peak Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t < 8.3ms) (Note 1) Typical Junction Capacitance per Element (Note 2) Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range @ IF = 4.0A @ TC = 25C @ TC = 125C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2 t Cj RqJC Tj, TSTG @ TA = 25C unless otherwise specified GBJ 8005 50 35 GBJ 801 100 70 GBJ 802 200 140 GBJ 804 400 280 8.0 170 1.0 5.0 500 120 55 1.6 -65 to +150 GBJ 806 600 420 GBJ 808 800 560 GBJ 810 1000 700 Unit V V A A V mA A2 s pF C/W C Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink. DS21217 Rev. D-2 1 of 2 www.diodes.com GBJ8005-GBJ810 a Diodes Incorporated 8 With heatsink IF, INSTANTANEOUS FORWARD CURRENT (A) 10 IO, AVERAGE RECTIFIED CURRENT (A) 10 1.0 6 4 Without heatsink 0.1 2 Resistive or Inductive load Tj = 25C 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Fig. 1 Forward Current Derating Curve 0.01 0 0.4 0.8 1.2 1.6 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) 180 Single half-sine-wave (JEDEC method) 100 Cj, JUNCTION CAPACITANCE (pF) Tj = 25C f = 1MHz IFSM, PEAK FWD SURGE CURRENT (A) 160 Tj = 150C 120 10 80 40 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current 1 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 1000 100 Tj = 125C Tj = 100C 10 1.0 Tj = 50C Tj = 25C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS21217 Rev. D-2 2 of 2 www.diodes.com GBJ8005-GBJ810 |
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